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Samsung 10nm SoC for Galaxy S8: Starts mass production.
Samsung 10nm SoC for Galaxy S8: Starts mass production.
Published: 2016/10/17
Channel: Aban Tech
Windows 10 Update, 1nm Transistor, New Oculus Touch Games
Windows 10 Update, 1nm Transistor, New Oculus Touch Games
Published: 2016/10/08
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Why is processor nanometer size important?
Why is processor nanometer size important?
Published: 2014/05/10
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10 NANOMETRE CHIPS ENTER MASS PRODUCTION IN 2017 -BrosTV
10 NANOMETRE CHIPS ENTER MASS PRODUCTION IN 2017 -BrosTV
Published: 2017/02/16
Channel: BrosTV
What is a 16nm, 14nm, 10nm and 28nm processor? What are the differences between them? EXPLAINED !
What is a 16nm, 14nm, 10nm and 28nm processor? What are the differences between them? EXPLAINED !
Published: 2016/08/27
Channel: Pros & Cons
IBM Breaks 10nm Barrier For Faster, Lighter Computer Chips - Newsy
IBM Breaks 10nm Barrier For Faster, Lighter Computer Chips - Newsy
Published: 2015/07/09
Channel: Newsy Tech
Finding the Killer Defects at 10nm and Beyond
Finding the Killer Defects at 10nm and Beyond
Published: 2016/03/30
Channel: appliedschannel
How Big Is a Nanometer?
How Big Is a Nanometer?
Published: 2013/06/27
Channel: World Science Festival
Intel Begins 10nm Trial Production This Quarter | 10nm Cannonlake on Track
Intel Begins 10nm Trial Production This Quarter | 10nm Cannonlake on Track
Published: 2016/07/31
Channel: RedGamingTech
HOW SMALL IS A NANOMETER? Size Comparison 1*10^-9
HOW SMALL IS A NANOMETER? Size Comparison 1*10^-9
Published: 2017/02/18
Channel: Me And My Life
Intel at 10nm ... a conversation with Mark Bohr of Intel
Intel at 10nm ... a conversation with Mark Bohr of Intel
Published: 2016/11/30
Channel: wesrch
Galaxy from 1pico meter to 10thousand light years total extension of world
Galaxy from 1pico meter to 10thousand light years total extension of world
Published: 2016/10/07
Channel: popular on youtube
Make Pores Smaller - Eshiko - The Best Face Powder 100% Hydrated Silica at 10 nanometer
Make Pores Smaller - Eshiko - The Best Face Powder 100% Hydrated Silica at 10 nanometer
Published: 2011/12/14
Channel: EshikoOfficial
Snapdragon 670 || 10 NM (Nanometer) Architecture || In-Display Fingerprint Sensor ||
Snapdragon 670 || 10 NM (Nanometer) Architecture || In-Display Fingerprint Sensor ||
Published: 2017/08/31
Channel: Tech Salvation
Intel 10nm Process Technology chips ( cannon lake )
Intel 10nm Process Technology chips ( cannon lake )
Published: 2017/03/31
Channel: Desire Tech Tips
Apple’s A10X SoC is a 10 nm Chip built by TSMC
Apple’s A10X SoC is a 10 nm Chip built by TSMC
Published: 2017/06/30
Channel: Andriod Today
Qualcomm Brings World’s First 48-Core 10nm Processor
Qualcomm Brings World’s First 48-Core 10nm Processor
Published: 2016/12/18
Channel: BACK-2-BACK
Tech Talk: 10nm Patterning
Tech Talk: 10nm Patterning
Published: 2015/08/20
Channel: SperlingMediaGroup
HW News: 10nm Intel CPUs, Record NVidia Revenue
HW News: 10nm Intel CPUs, Record NVidia Revenue
Published: 2016/02/23
Channel: Gamers Nexus
Intel
Intel's second 10 nanometer chip architecture is Ice Lake
Published: 2017/08/19
Channel: HOT GAME NEWS
CONFUSED?16nm,14nm,10nm,etc.NANOMETER EXPLAINED
CONFUSED?16nm,14nm,10nm,etc.NANOMETER EXPLAINED
Published: 2017/04/06
Channel: Yashraj Creations tech
Nano - 10 Nanometer Ferrofluid
Nano - 10 Nanometer Ferrofluid
Published: 2015/10/26
Channel: Ben Schleifer
Designing 7-nm IP, Bring It On Moore!
Designing 7-nm IP, Bring It On Moore!
Published: 2016/05/03
Channel: Synopsys
IBM gets small, unveils 5-nanometer computer chip design using new approach
IBM gets small, unveils 5-nanometer computer chip design using new approach
Published: 2017/06/05
Channel: Digital Trends
TSMC assured there are no problems with a 10-nm process technology
TSMC assured there are no problems with a 10-nm process technology
Published: 2017/01/01
Channel: HOT GAME NEWS
What is Cannon lake?
What is Cannon lake?
Published: 2017/05/10
Channel: Official Tech
Intel Ice Lake 8 Core, 16 Thread CPU in 2018 to combat Zen 2 + 7980XE benchmarks
Intel Ice Lake 8 Core, 16 Thread CPU in 2018 to combat Zen 2 + 7980XE benchmarks
Published: 2017/09/20
Channel: It'sAGundam
IVALICE-SERVEUR / Yakuza (icc 10 Nm)  Dame Murmemort
IVALICE-SERVEUR / Yakuza (icc 10 Nm) Dame Murmemort
Published: 2013/08/28
Channel: Patou Kikou
INFAMOUS vs Megaera 10 NM
INFAMOUS vs Megaera 10 NM
Published: 2013/04/26
Channel: Steven Buttarazzi
Shannox 10 Nm By The Ashbringer || Ivalice Sienna
Shannox 10 Nm By The Ashbringer || Ivalice Sienna
Published: 2013/12/24
Channel: Aizen Hard
Les3frer - Gardes pierre 10 NM
Les3frer - Gardes pierre 10 NM
Published: 2012/12/06
Channel: Les3frerswow
IVALICE-SERVEUR / Yakuza (icc 10 Nm) Gargamoelle
IVALICE-SERVEUR / Yakuza (icc 10 Nm) Gargamoelle
Published: 2013/08/29
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Ultimate Resurrection vs Tortos 10 nm
Ultimate Resurrection vs Tortos 10 nm
Published: 2013/07/04
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IVALICE-SERVEUR / Yakuza (icc 10 Nm) Deathbringer saurfang
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Published: 2013/08/28
Channel: Patou Kikou
Mana Mana - Siegecrafter Blackfuse 10 NM
Mana Mana - Siegecrafter Blackfuse 10 NM
Published: 2013/09/25
Channel: NotNosa
Megaera 10 Nm
Megaera 10 Nm
Published: 2013/04/01
Channel: Satanaël
Samsung Begins Mass-Production of 10 Nanometer Scale Chips | Teh Tech News - Oct 18
Samsung Begins Mass-Production of 10 Nanometer Scale Chips | Teh Tech News - Oct 18
Published: 2016/10/18
Channel: IRL Server
Absynthe   Garrosh 10 Nm
Absynthe Garrosh 10 Nm
Published: 2014/06/03
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ICC 10 Nm - Festergut
ICC 10 Nm - Festergut
Published: 2016/08/30
Channel: skateboardape
IVALICE-SERVEUR / Yakuza (icc 10 Nm) Blood Princes
IVALICE-SERVEUR / Yakuza (icc 10 Nm) Blood Princes
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icc 10 nm solo Arthas
Published: 2014/02/13
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Vae Victis - Lei Shen 10 nm
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Published: 2013/11/19
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Mana Mana - Paragons of the Klaxxi 10 NM
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ThunderBolt vs Garaj
ThunderBolt vs Garaj'al 10 NM - PoV Paladin heal
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ICC 10 Nm - Valithria Dreamwalker
ICC 10 Nm - Valithria Dreamwalker
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WIKIPEDIA ARTICLE

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In semiconductor fabrication, the International Technology Roadmap for Semiconductors (ITRS) defines the 10 nanometer (10 nm) node as the technology node following the 14 nm node. "10 nm class" denotes chips made using process technologies between 10 and 20 nanometers.

Samsung first released their version of a "10 nm" process node in 2017.[1][2]

History[edit]

Background[edit]

The ITRS's original naming of this technology node was "11 nm". According to the 2007 edition of the roadmap, by the year 2022, the half-pitch (i.e., half the distance between identical features in an array) for a DRAM should be 11 nm. Pat Gelsinger, at the time serving as Intel's Chief Technology Officer, claimed in 2008 that Intel saw a 'clear way' towards the 10 nm node.[3][4] At the 11 nm node, Intel expected (in 2006) to be using a half-pitch of around 21 nm, in 2015,[5] Nvidia's chief scientist, William Dally, claimed (in 2009) that they would also reach 11 nm semiconductors in 2015, a transition he claimed would be facilitated principally through new electronic design automation tools.[6]

As of 2014, "10 nm" node was projected to use a metal pitch of 40–50 nm.[7]

This 10 nm design rule is considered likely to be realized by multiple patterning,[8][9][10] given the difficulty of implementing EUV lithography.

Potential technologies[edit]

While the roadmap has been based on the continuing extension of CMOS technology, even this roadmap does not guarantee that silicon-based CMOS will extend that far. This is to be expected, since the gate length for this node may be smaller than 6 nm, and the corresponding gate dielectric thickness would scale down to a monolayer or even less. Scientists have estimated that transistors at these dimensions are significantly affected by quantum tunnelling.[11] As a result, non-silicon extensions of CMOS, using III-V materials or carbon nanotube/nanowires, as well as non-CMOS platforms, including molecular electronics, spin-based computing, and single-electron devices, have been proposed. Hence, this node marks the practical beginning of nanoelectronics.

The extensive use of ultra-low-κ dielectrics (such as spin-on polymers or other porous materials) means that conventional photolithography, etch, or even chemical-mechanical polishing processes are unlikely to be used, because these materials contain a high density of voids and gaps. At the ~10 nm scale, quantum tunneling (especially through gaps) becomes a significant phenomenon.[12] Controlling gaps on these scales by means of electromigration can produce interesting electrical properties.[13]

Quantum tunneling may be advantageous if its effect on device behavior can be understood, and exploited, in the design. Future transistors may have insulating channels. An electron wave function decays exponentially in a "classically forbidden" region at a rate that can be controlled by the gate voltage. Interference effects are also possible;[14] Alternate option is in heavier mass semiconducting channels.[15] Photoemission electron microscopy (PEEM) data has been used to show that low energy electrons ~1.35 eV could travel as far as ~15 nm in SiO2, despite an average measured attenuation length of 1.18 nm.[16]

Technology demos and pre-production.[edit]

In 2012, IBM produced a sub-10 nm carbon nanotube transistor that outperformed silicon on speed and power.[17] "The superior low-voltage performance of the sub-10 nm CNT transistor proves the viability of nanotubes for consideration in future aggressively scaled transistor technologies," according to the abstract of the paper in Nano Letters.[18]

In April 2015, TSMC announced that 10 nm production would begin at the end of 2016.[19]

On 23 May 2015, Samsung Electronics showed off a 300 mm wafer of 10 nm FinFET chips.[20]

In c. August 2016, Intel began trial production at 10 nm.[21]

On 17 October 2016, Samsung Electronics announced mass production at 10 nm.[22]

On 29 March 2017, Samsung started preorders for their Samsung Galaxy S8 which uses Samsung's version of a "10 nm" processor.[23]

Shipping devices[edit]

As of mid-2016, semiconductor business Intel, and foundries at TSMC, and Samsung were all expected to ship or begin volume production of 10 nm devices in the first quarter of 2017, with foundry customers for 2017 including Qualcomm (Snapdragon 835) at Samsung, and Apple Inc. and MediaTek at TSMC.[24]

On 21 April 2017, Samsung started shipping their Samsung Galaxy S8 which uses Samsung's version of a "10 nm" processor.[25]

On 12 June 2017, Apple delivered iPad Pro 2nd Generation tablets powered with TSMC produced Apple A10X chips using the 10 nm FinFET process.[26]

10 nm process nodes[edit]

ITRS Logic Device

Ground Rules

Intel

(proposed)

Samsung TSMC
Process name 11/10nm 10nm 10nm 10nm
Transistor Fin Pitch (nm) 36 34 47 N/A
Transistor Fin Height 42 53 49 N/A
Transistor Gate Pitch (nm) 48 54 68 66
Interconnect pitch (nm) 36 36 51 44

Lower numbers are better. Transistor gate pitch is also referred to as CPP (contacted poly pitch) and interconnect pitch is also referred to as MMP (minimum metal pitch). Samsung reported their 10 nm process as having a 64 nm Transistor Gate Pitch and 48 nm Interconnect Pitch. TSMC reported their 10 nm process as having a 64 nm Transistor Gate Pitch and 42 nm Interconnect Pitch. Further investigation by Tech Insights revealed these values to be false and they have been updated accordingly. In addition, the transistor fin pitch and fin height of Samsung's 10nm process were updated by MSSCORPS CO at SEMICON Taiwan 2017.[27][28][29][30][31]

However, TSMC's 10 nm process is reportedly denser than Intel's 14 nm process or Samsung's 10 nm process, thus giving TSMC a technological lead in terms of density.[32][33][34]

References[edit]

  1. ^ Kellex (2016-10-17). "Samsung Starts Production on 10nm Processors, Possibly for the Snapdragon 830". Droid Life. Retrieved 2016-11-23. 
  2. ^ "Samsung Starts Industry’s First Mass Production of System-on-Chip with 10-Nanometer FinFET Technology". news.samsung.com. Retrieved 2016-11-23. 
  3. ^ Damon Poeter. "Intel's Gelsinger Sees Clear Path To 10nm Chips". Archived from the original on 2009-06-22. Retrieved 2009-06-20. 
  4. ^ "MIT: Optical lithography good to 12 nanometers". Archived from the original on 2009-06-22. Retrieved 2009-06-20. 
  5. ^ Borodovsky, Y. (2006). "Marching to the beat of Moore's Law". Proc. SPIE. 6153. doi:10.1117/12.655176. 
  6. ^ "Nvidia Chief Scientist: 11nm Graphics Chips with 5000 Stream Processors Due in 2015". XBit Labs. July 30, 2009. Archived from the original on September 3, 2009. Retrieved 2009-08-27. 
  7. ^ Who will lead at 10nm?
  8. ^ SEMICON West - Lithography Challenges and Solutions
  9. ^ J. Word et al., Proc. SPIE 6925 (2008).[full citation needed][not in citation given]
  10. ^ Intel extending ArF lithography Archived July 14, 2011, at the Wayback Machine.
  11. ^ "Intel scientists find wall for Moore's Law". ZDNet. December 1, 2003. 
  12. ^ Naitoh, Y.; et al. (2007). "New Nonvolatile Memory Effect Showing Reproducible Large Resistance Ratio Employing Nano-gap Gold Junction". MRS Symposium Proceedings. 997: 0997–I04–08. doi:10.1557/PROC-0997-I04-08. 
  13. ^ Kayashima, S.; et al. (2007). "Control of Tunnel Resistance of Nanogaps by Field-Emission-Induced Electromigration". Jap. J. Appl. Phys. 46 (36–40): L907–909. doi:10.1143/JJAP.46.L907. 
  14. ^ Ahmed, Khaled; Schuegraf, Klaus (November 2011). "Transistor Wars: Rival architectures face off in a bid to keep Moore's Law alive". IEEE Spectrum: 50. 
  15. ^ Mehrotra, S.; et al. (2013). "Engineering Nanowire n-MOSFETs at Lg < 8 nm". Preprint. arXiv:1303.5458Freely accessible. 
  16. ^ Ballarotto, V. W.; et al. (2002). "Photoelectron emission microscopy of ultrathin oxide covered devices". JVST B. 20 (6): 2514–2518. doi:10.1116/1.1525007. 
  17. ^ "IBM: Tiny carbon nanotube transistor outshines silicon". Cnet.com. January 30, 2012. 
  18. ^ Franklin, Aaron D.; et al. (2012). "Sub-10 nm Carbon Nanotube Transistor". Nano Letters. 12 (2): 758–762. doi:10.1021/nl203701g. 
  19. ^ "TSMC Launching 10 nm FinFET Process In 2016, 7nm In 2017". 19 April 2015. Retrieved 25 May 2015. 
  20. ^ "Samsung vows to start 10nm chip production in 2016". 23 May 2015. Retrieved 16 July 2015. 
  21. ^ Pirzada, Usman (Aug 2016), "Intel Starts Up 10nm Factory – Trial Production Will Begin This Quarter, 10nm Canonnonlake Processors On Track For 2H 2017", wccftech.com 
  22. ^ [1]
  23. ^ http://www.samsung.com/uk/smartphones/galaxy-s8/performance/
  24. ^ Manners, David, "10nm Lines Up For Q1.", www.electronicsweekly.com 
  25. ^ http://www.samsung.com/us/explore/galaxy-s8/buy/
  26. ^ techinsights.com. "10nm Rollout Marching Right Along". www.techinsights.com. Retrieved 2017-06-30. 
  27. ^ "Intel Details Cannonlake's Advanced 10nm FinFET Node, Claims Full Generation Lead Over Rivals". 
  28. ^ "International Technology Roadmap for Semiconductors 2.0 2015 Edition Executive Report" (PDF). 
  29. ^ "14nm 16nm 10nm and 7nm - What we know now". 
  30. ^ "Qualcomm Snapdragon 835 First to 10 nm". 
  31. ^ "10 nm lithography process". 
  32. ^ "Samsung’s 14 nm LPE FinFET transistors". 
  33. ^ "International Technology Roadmap for Semiconductors 2.0 2015 Edition Executive Report" (PDF). 
  34. ^ "Intel’s 22nm Tri-Gate Transistors". 


Preceded by
14 nm
CMOS manufacturing processes Succeeded by
7 nm

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